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Acceleration of Atomistic NEGF: Algorithms, Parallelization, and Machine Learning

International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2025
Mathieu Luisier
Nicolas Vetsch
Alexander Maeder
Vincent Maillou
Anders Winka
Leonard Deuschle
Chen Hao Xia
Manasa Kaniselvan
Marko Mladenovic
Jiang Cao
Alexandros Nikolaos Ziogas
Main:3 Pages
7 Figures
Bibliography:1 Pages
Abstract

The Non-equilibrium Green's function (NEGF) formalism is a particularly powerful method to simulate the quantum transport properties of nanoscale devices such as transistors, photo-diodes, or memory cells, in the ballistic limit of transport or in the presence of various scattering sources such as electronphonon, electron-photon, or even electron-electron interactions. The inclusion of all these mechanisms has been first demonstrated in small systems, composed of a few atoms, before being scaled up to larger structures made of thousands of atoms. Also, the accuracy of the models has kept improving, from empirical to fully ab-initio ones, e.g., density functional theory (DFT). This paper summarizes key (algorithmic) achievements that have allowed us to bring DFT+NEGF simulations closer to the dimensions and functionality of realistic systems. The possibility of leveraging graph neural networks and machine learning to speed up ab-initio device simulations is discussed as well.

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