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TuRaN: True Random Number Generation Using Supply Voltage Underscaling
  in SRAMs

TuRaN: True Random Number Generation Using Supply Voltage Underscaling in SRAMs

20 November 2022
Ismail Emir Yüksel
Ataberk Olgun
Behzad Salami
F. N. Bostanci
Yahya Can Tugrul
A. G. Yaglikçi
Nika Mansouri-Ghiasi
O. Mutlu
Oguz Ergin
ArXiv (abs)PDFHTML

Papers citing "TuRaN: True Random Number Generation Using Supply Voltage Underscaling in SRAMs"

1 / 1 papers shown
Title
In-DRAM True Random Number Generation Using Simultaneous Multiple-Row Activation: An Experimental Study of Real DRAM Chips
In-DRAM True Random Number Generation Using Simultaneous Multiple-Row Activation: An Experimental Study of Real DRAM Chips
Ismail Emir Yüksel
Ataberk Olgun
F. N. Bostanci
Oguzhan Canpolat
Geraldo F. Oliveira
Mohammad Sadrosadati
A. G. Yaglikçi
O. Mutlu
89
0
0
23 Oct 2025
1